Electron Transport Properties and Device Applications of Nanocrystalline Silicon Quantum Dots

نویسندگان

  • H. Mizuta
  • M. Khalafalla
  • Z.A.K. Durrani
  • S. Uno
  • N. Koshida
  • Y. Tsuchiya
  • S. Oda
چکیده

This paper presents an overview on recent topical studies on electronic properties and device applications of nanocrystalline silicon (nc-Si) quantum dots. We first discuss the electrostatic and quantum-mechanical coherent interactions observed for strongly-coupled double Si nanodots. Secondly we analyze the phononic states and electron-phonon interactions theoretically for the linear chain of Si nanodots covered with thin oxide layers. Finally we discuss a non-volatile nanoelectromechanical memory device which utilizes the single-electron storage of the Si nanodots and the mechanical bistability of a nanoscale freestanding beam.

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تاریخ انتشار 2004